Radiation characteristics

STRH8N10

8/18

Doc ID 010029 Rev 2

Single event effect, SOA

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant

to heavy ion environment for single event effect according to MIL-STD-750E method 1080

(bias circuit in

Figure 3: Single event effect, bias circuit) SEB and SEGR tests have been

performed with a fluence of 3e+5 ions/cm².

The accept/reject criteria are:

●

soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm².

●

SEGR test: the gate current is monitored every 100 ms. A gate stress is performed

before and after irradiation. Stop condition: as soon as the gate current reaches 100 nA

(during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm².

The results are:

–

no SEB

–

SEGR test produces the following SOA (see

Table 12: Single event effect (SEE),

safe operating area (SOA) and Figure 2: Single event effect, SOA)

Table 11.

1.

Refer to

Figure 16.

Symbol

Parameter

Test conditions

Drift values

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

±2%

V

Table 12.

Single event effect (SEE), safe operating area (SOA)

Energy

(MeV)

Range

(µm)

Kr

32

768

94

100

80

60

30

10