STRH8N10 datasheet(3/18 Pages) STMICROELECTRONICS

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STRH8N10

Electrical ratings

Doc ID 010029 Rev 2

3/18

Electrical ratings

(TC = 25°C unless otherwise specified)

Table 2.

Absolute maximum ratings (pre-irradiation)

Symbol

Parameter

Value

Unit

VDS

(1)

This rating is guaranteed @ TJ > 25 °C (see Figure 10: Normalized BVDSS vs temperature).

Drain-source voltage (VGS = 0)

100

VGS

(2)

This value is guaranteed over the full range of temperature.

Gate-source voltage

±20

(3)

Rated according to the Rthj-case + Rthc-s.

Drain current (continuous) at TC= 25°C

(1)

Drain current (continuous) at TC= 100°C

4.1

IDM

(4)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

(1)

Total dissipation at TC= 25°C

dv/dt (5)

ISD ≤ 6 A, di/dt ≤ 1060 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

6.4

V/ns

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case

5.0

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

(1)

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

457

EAS

Single pulse avalanche energy

(starting Tj=110°C, Id=Iar, Vdd=50V)

134

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