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STPS2H100 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS2H100
Description  Power Schottky rectifier
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS2H100 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS2H100
2/10
Doc ID 6115 Rev 7
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(AV)
Average forward current
SMA / SMB
TL = 130 °C δ = 0.5
2A
SMB flat
TL = 150 °C δ = 0.5
IFSM
Surge non repetitive forward current
tp =10 ms sinusoidal
75
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
2400
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Operating junction temperature (1)
175
°C
1.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead
SMA
30
°C/W
SMB
25
SMB flat
15
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
1µA
Tj = 125 °C
0.4
1
mA
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 2 A
0.79
V
Tj = 125 °C
0.6
0.65
Tj = 25 °C
IF = 4 A
0.88
Tj = 125 °C
0.69
0.74
1.
Pulse test: tp = 5 ms,
δ < 2%
2.
Pulse test: tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation: P = 0.56 x IF(AV) + 0.045 IF
2
(RMS)



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