STPS2H100_10 datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS2H100

4/10

Doc ID 6115 Rev 7

Figure 7.

Non repetitive surge peak forward

current versus overload duration

(maximum values) (SMB)

Figure 8.

Non repetitive surge peak forward

current versus overload duration

(maximum values) (SMB flat)

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ=0.5

t(s)

T =125°C

T =25°C

T =75°C

SMB

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ=0.5

t(s)

T =125°C

T =25°C

T =75°C

SMB flat

Figure 9.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (SMA / SMB)

Figure 10.

Relative variation of thermal

impedance junction to lead

versus pulse duration (SMB flat)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

δ=tp/T

t (s)

Single pulse

SMA

SMB

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

SMB flat

(non exposed pad)

Z/R

th(j-l)

t (s)

Single pulse

Figure 11.

Reverse leakage current versus

reverse voltage applied

(typical values)

Figure 12.

Junction capacitance versus

reverse voltage applied

(typical values)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

2040

6080

100

j=150°C

j=125°C

j=25°C

j=100°C

j=75°C

j=50°C

V (V)

I (µA)

100

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

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