MJ10022 MJ10023

4

Motorola Bipolar Power Transistor Device Data

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

RESISTIVE SWITCHING

20

Ω

1

0

PW Varied to Attain

IC = 100 mA

TURN–ON TIME

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

t1 Adjusted to

Obtain IC

t1 [

Lcoil (ICM)

VCC

t2 [

Lcoil (ICM)

Vclamp

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUIT

2

IB1

1

2

5 V

INDUCTIVE TEST CIRCUIT

Lcoil = 10 mH, VCC = 10 V

Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

VCC = 250 V

RL = 12.5 Ω

Pulse Width = 25

µs

1

INPUT

2

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

t1

ICM

tf Clamped

tf

t

t

Vclamp

t2

TIME

VCEM

OUTPUT WAVEFORMS

1

2

TUT

RL

VCC

Figure 7. Inductive Switching Measurements

Figure 8. Typical Peak Reverse Base Current

10

0

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

1.0

2.0

3.0

4.0

8.0

7.0

5.0

3.0

IC = 20 A

IB1 = 1 A

Vclamp = 250 V

TJ = 25°C

9.0

8.0

6.0

4.0

2.0

1.0

7.0

6.0

5.0

Figure 9. Typical Inductive Switching Times

2.0

0

VBE(off), BASE–EMITTER VOLTAGE (VOLTS)

0

1.0

2.0

3.0

4.0

8.0

1.0

0.75

0.5

ICM = 20 A

IB1 = 1 A

VCEM = 250 V

1.75

1.25

0.25

7.0

6.0

5.0

tsv @ 100°C

tsv @ 25°C

tc @ 100°C

tc @ 25°C

tfi

trv

IC

VCE

90% IB1

ICM

VCEM

90% VCEM

90% ICM

10%

ICM

2% IC

IB

tsv

tti

tc

TIME

Vclamp

10% VCEM

1.5