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MJ10023 Datasheet(PDF) 1 Page - Motorola, Inc

Part # MJ10023
Description  40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
PDF  8 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10023 Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola Bipolar Power Transistor Device Data
Designer's™ Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated switchmode applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
150 ns Inductive Fall Time @ 25
_C (Typ)
300 ns Inductive Storage Time @ 25
_C (Typ)
• Operating Temperature Range – 65 to + 200_C
• 100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJ10022
MJ10023
Unit
Collector–Emitter Voltage
VCEO
350
400
Vdc
Collector–Emitter Voltage
VCEV
450
600
Vdc
Emitter Base Voltage
VEB
80
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
40
80
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
20
40
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
250
143
1.43
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.7
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10022/D
© Motorola, Inc. 1995
40 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 AND 400 VOLTS
250 WATTS
MJ10022
MJ10023
CASE 197A–05
TO–204AE (TO–3)
≈ 100
≈ 15


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