Product Specifications

PART NO.:

VL470L2925-B3SG

REV: 1.0

Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA –

www.virtium.com

1

General Information

1GB 128Mx64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN

Description

The VL470L2925 is a 128Mx64 Double Data Rate SDRAM high density SODIMM. This dual rank memory module

consists of sixteen CMOS 64Mx8 bits with 4 banks Synchronous DRAMs in BGA packages and a 2K EEPROM in an

8-pin TSSOP package. This module is a 200-pin small-outline dual in-line memory module and is intended for

mounting into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board for each

DDR SDRAM.

Features

Pin Description

• 200-pin, small-outline dual in-line memory module (SODIMM)

• Two data transfers per clock cycle

• VDD = VDDQ = 2.5V +/-0.2V for DDR333

• JEDEC standard 2.5V I/O (SSTL_2 compatible)

• VDDSPD = 2.3V to 3.6V

• Bi-directional data-strobe (DQS)

• Differential clock inputs (CK and CK#)

• DLL aligns DQ and DQS transition with CK transition

• Programmable read latency: DDR333 (2.5 clock)

• Programmable burst; length (2, 4, 8)

• Programmable burst (sequential & interleave)

• Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)

• Serial presence detect (SPD) with EEPROM

• Lead-free, RoHS compliant

• JEDEC pinout

• Gold edge contacts

• PCB: Height 31.75mm (1.250”), double sided component

- Industrial (-40

Pin Name

Function

A0~A12

Row Address Inputs

A0~A9, A11

Column Address Inputs

BA0~BA1

Bank Address Inputs

DQ0~DQ63

Data Input/Output

DQS0~DQS7

Data Strobes Input/Output

DM0~DM7

Data Mask

CK0, CK0#

CK1, CK1#

Clock Input

CKE0, CKE1

Clock Enables Input

CS0#, CS1#

Chip Selects Input

RAS#

Row Address Strobes

CAS#

Column Address Strobes

WE#

Write Enable

VDD

Voltage Supply

VDDQ

Voltage Supply for DQS

VSS

Ground

VREF

Power Supply Reference

VDDSPD

SPD Voltage Supply

SA1~SA2

SPD Address

SDA

SPD Data Input/Output

SCL

SPD Clock Input

NC

No Connect

Order Information:

VL470L2925 - B3 S G - X

OPERATING TEMPERATURE

None: Commercial

S1:

Industrial screening

DRAM DIE

G-DIE

DRAM MANUFACTURER

S - SAMSUNG

MODULE SPEED

B3: PC2700 @CL2.5

VL: Lead-free/RoHS

DRAM component: Samsung K4H510838G-HCB3