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4614 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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4614 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  Symbol Max p-channel Units VDS V VGS V IDM IAR EAR mJ TJ, TSTG °C Symbol Device Typ Max Units n-ch 48 62.5 °C/W n-ch 74 110 °C/W RθJL n-ch 35 50 °C/W p-ch 48 62.5 °C/W p-ch 74 110 °C/W RθJL p-ch 35 50 °C/W 20 A 14 -20 9.8 Power Dissipation Continuous Drain Current A ID PD Avalanche Current B Repetitive avalanche energy L=0.1mH B TA=25°C TA=70°C Pulsed Drain Current B -55 to 150 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A 40 -40 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel W 6 5 30 2 1.28 -4 -5 2 1.28 RθJA Maximum Junction-to-Ambient A Steady-State -30 TA=70°C TA=25°C Steady-State Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel -55 to 150 Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s AO4614B 40V Dual P + N-Channel MOSFET Product Summary N-Channel P-Channel VDS (V) = 40V, -40V ID = 6A (VGS=10V) -5A (VGS=-10V) RDS(ON) < 30m Ω (V GS=10V) < 45m Ω (VGS= -10V) < 38m Ω (V GS=4.5V) < 63m Ω (VGS= -4.5V) 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested General Description The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. G1 S1 G2 S2 D1 D1 D2 D2 2 4 5 1 3 8 6 7 Top View G1 D1 S1 G2 D2 S2 n-channel p-channel SOIC-8 Top View Bottom View Pin1 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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