4614 datasheet(2/7 Pages) AOSMD

2 / 7 page

AO4614B

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

±100

VGS(th)

1.7

2.5

ID(ON)

TJ=125°C

gFS

VSD

0.76

Ciss

410

516

650

Coss

Crss

4.6

Ω

Qg (10V)

8.9

10.8

Qg (4.5V)

4.3

5.6

Qgs

2.4

Qgd

1.4

tD(on)

6.4

3.6

tD(off)

16.2

6.6

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Output Capacitance

Input Capacitance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Reverse Transfer Capacitance

Gate resistance

IS=1A,VGS=0V

VGS=10V, ID=6A

Diode Forward Voltage

VGS=10V, VDS=20V, RL=3.3Ω,

RGEN=3Ω

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Total Gate Charge

VGS=10V, VDS=20V,

ID=6A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

VGS=4.5V, ID=5A

VDS=5V, ID=6A

Ω

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=10V, VDS=5V

µA

Gate-Body leakage current

VDS=0V, VGS= ±20V

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=40V, VGS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=6A, dI/dt=100A/µs

Total Gate Charge

VGS=0V, VDS=20V, f=1MHz

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev2 : Nov. 2010

Alpha & Omega Semiconductor, Ltd.

4614 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

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