476KXM063M datasheet(5/19 Pages) FREESCALE

Part #	476KXM063M

Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

PDF	19 Pages

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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5 / 19 page

MRF6V2300NR1 MRF6V2300NBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

1000

020

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 4. Capacitance versus Drain--Source Voltage

Ciss

100

TC =25°C

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 5. DC Safe Operating Area

DRAIN VOLTAGE (VOLTS)

120

Figure 6. DC Drain Current versus Drain Voltage

600

IDQ = 1350 mA

Pout, OUTPUT POWER (WATTS) CW

Figure 7. CW Power Gain versus Output Power

VDD =50 Vdc

f1 = 220 MHz

100

VGS =3 V

Coss

Crss

100

2.75 V

2.63 V

2.5 V

2.25 V

100

1125 mA

900 mA

650 mA

450 mA

100

--55

--15

Pout, OUTPUT POWER (WATTS) PEP

--25

--30

--35

--40

600

Figure 8. Third Order Intermodulation Distortion

versus Output Power

VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz

Two--Tone Measurements, 100 kHz Tone Spacing

--45

--50

--20

IDQ = 450 mA

1350 mA

900 mA

650 mA

1125 mA

Pin, INPUT POWER (dBm)

Figure 9. CW Output Power versus Input Power

P3dB = 55.76 dBm (377 W)

Actual

Ideal

P1dB = 55.04 dBm (319 W)

VDD =50 Vdc,IDQ = 900 mA

f = 220 MHz

Measured with ±30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

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