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STM32F407IG Datasheet(PDF) 133 Page - STMicroelectronics |
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STM32F407IG Datasheet(HTML) 133 Page - STMicroelectronics |
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133 / 180 page ![]() STM32F405xx, STM32F407xx Electrical characteristics Doc ID 022152 Rev 3 133/180 Figure 53. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms 1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used. Table 73. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2) 1. CL = 30 pF. 2. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 2THCLK–0.5 2 THCLK+1 ns tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 0.5 3 ns tw(NOE) FSMC_NOE low time 2THCLK–2 2THCLK+ 2 ns th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns tv(A_NE) FSMC_NEx low to FSMC_A valid - 4.5 ns th(A_NOE) Address hold time after FSMC_NOE high 4 - ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5 ns th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 0 - ns tsu(Data_NE) Data to FSMC_NEx high setup time THCLK+4 - ns tsu(Data_NOE) Data to FSMC_NOEx high setup time THCLK+4 - ns th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns th(Data_NE) Data hold time after FSMC_NEx high 0 - ns tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2 ns tw(NADV) FSMC_NADV low time - THCLK ns |
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