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STM32F407IG Datasheet(PDF) 129 Page - STMicroelectronics |
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STM32F407IG Datasheet(HTML) 129 Page - STMicroelectronics |
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129 / 180 page  STM32F405xx, STM32F407xx Electrical characteristics Doc ID 022152 Rev 3 129/180 5.3.21 Temperature sensor characteristics 5.3.22 VBAT monitoring characteristics 5.3.23 Embedded reference voltage The parameters given in Table 71 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 13. Table 69. TS characteristics Symbol Parameter Min Typ Max Unit TL (1) VSENSE linearity with temperature - ±1 ±2°C Avg_Slope(1) Average slope - 2.5 mV/°C V25 (1) Voltage at 25 °C - 0.76 V tSTART (2) Startup time - 6 10 µs TS_temp (3)(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs 1. Based on characterization, not tested in production. 2. Guaranteed by design, not tested in production. 3. Shortest sampling time can be determined in the application by multiple iterations. Table 70. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 2 - Er(1) Error on Q –1 - +1 % TS_vbat (2)(2) ADC sampling time when reading the VBAT 1 mV accuracy 5- - µs 1. Guaranteed by design, not tested in production. 2. Shortest sampling time can be determined in the application by multiple iterations. Table 71. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint (1) ADC sampling time when reading the internal reference voltage 10 - - µs VRERINT_s (2) Internal reference voltage spread over the temperature range VDD = 3 V - 3 5 mV TCoeff (2) Temperature coefficient - 30 50 ppm/°C tSTART (2) Startup time - 6 10 µs 1. Shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design, not tested in production. |
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