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ADG508F Datasheet(PDF) 2 Page - Analog Devices |
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ADG508F Datasheet(HTML) 2 Page - Analog Devices |
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2 / 12 page  REV. C –2– (VDD = +15 V 10%, VSS = –15 V 10%, GND = 0 V, unless otherwise noted) Dual Supply B Version T Version –40 C to –55 C to Parameter +25 C +85 C +25 C +125 C Units Test Conditions/Comments ANALOG SWITCH Analog Signal Range VSS + 3 VSS + 3 V min VDD – 1.5 VDD – 1.5 V max RON 300 350 300 400 Ω typ –10 V < VS < +10 V, IS = 1 mA; VDD = +15 V ± 10%, VSS = –15 V ± 10% 400 450 Ω max –10 V < VS < +10 V, IS = 1 mA; VDD = +15 V ± 5%, VSS = –15 V ± 5% RON Drift 0.6 0.6 %/ °C typ V S = 0 V, IS = 1 mA RON Match 5 5 % max VS = 0 V, IS = 1 mA LEAKAGE CURRENTS Source OFF Leakage IS (OFF) ±0.02 ±0.02 nA typ VD = ± 10 V, VS = 10 V; ± 1 ±50 ± 1 ±50 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.04 ±0.04 nA typ VD = ± 10 V, VS = 10 V; ADG508F/ADG528F ± 1 ±60 ± 1 ±200 nA max Test Circuit 3 ADG509F ± 1 ±30 ± 1 ±100 nA max Channel ON Leakage ID, IS (ON) ±0.04 ±0.04 nA typ VS = VD = ± 10 V; ADG508F/ADG528F ± 1 ±60 ± 1 ±200 nA max Test Circuit 4 ADG509F ± 1 ±30 ± 1 ±100 nA max FAULT Output Leakage Current ±0.02 ±0.02 nA typ VS = ± 33 V, VD = 0 V, Test Circuit 3 (With Overvoltage) ± 2 ± 2 ± 2 µA max Input Leakage Current ±0.005 ±0.005 µA typ VS = ± 25 V, VD = 10 V, Test Circuit 5 (With Overvoltage) ± 2 ± 2 µA max Input Leakage Current ±0.001 ±0.001 µA typ VS = ± 25 V, VD = VEN = A0, A1, A2 = 0 V (With Power Supplies OFF) ± 2 ± 2 µA max Test Circuit 6 DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current IINL or IINH ± 1 ± 1 µA max VIN = 0 or VDD CIN, Digital Input Capacitance 5 5 pF typ DYNAMIC CHARACTERISTICS 2 tTRANSITION 200 200 ns typ RL = 1 MΩ, CL = 35 pF; 300 400 300 400 ns max VS1 = ± 10 V, VS8 = 10 V; Test Circuit 7 tOPEN 50 50 ns typ RL = 1 kΩ, CL = 35 pF; 25 10 25 10 ns min VS = +5 V; Test Circuit 8 tON (EN, WR) 200 200 ns typ RL = 1 kΩ, CL = 35 pF; 250 400 250 400 ns max VS = +5 V; Test Circuit 9 tOFF (EN, RS) 200 200 ns typ RL = 1 kΩ, CL = 35 pF; 250 400 250 400 ns max VS = +5 V; Test Circuit 9 tSETT, Settling Time 0.1% 1 1 µs typ RL = 1 kΩ, CL = 35 pF; 0.01% 2.5 2.5 µs typ VS = +5 V ADG528F Only tW, Write Pulsewidth 100 120 100 200 ns min tS, Address, Enable Setup Time 100 100 ns min tH, Address, Enable Hold Time 10 10 ns min tRS, Reset Pulsewidth 100 100 ns min Charge Injection 4 4 pC typ VS =0 V, RS =0 Ω,CL= 1 nF; Test Circuit 12 OFF Isolation 68 68 dB typ RL = 1 kΩ, CL = 15 pF, f = 100 kHz; 50 50 dB min VS = 7 V rms; Test Circuit 13 CS (OFF) 5 5 pF typ CD (OFF) ADG508F/ADG528F 50 50 pF typ ADG509F 25 25 pF typ POWER REQUIREMENTS IDD 0.1 0.2 0.1 0.2 mA max VIN = 0 V or 5 V ISS 0.1 0.1 0.1 0.1 mA max NOTES 1Temperature ranges are as follows: B Version: –40 °C to +85°C; T Version: –55°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. ADG508F/ADG509F/ADG528F–SPECIFICATIONS1 |
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