6908A datasheet(2/11 Pages) AOSMD

2 / 11 page

AON6908A

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

TJ=55°C

IGSS

100

VGS(th)

Gate Threshold Voltage

1.3

1.8

2.4

ID(ON)

100

7.4

8.9

TJ=125°C

11.1

13.4

12.5

Ω

gFS

VSD

0.7

Ciss

680

850

1110

Coss

260

380

540

Crss

0.7

1.4

2.1

Ω

Qg(10V)

12.5

Qg(4.5V)

4.6

5.7

6.9

Qgs

1.6

2.4

Qgd

1.5

2.6

3.6

tD(on)

9.5

tD(off)

18.5

trr

10.5

Qrr

17.2

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=500A/µs

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=15V, ID=11.5A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

VDS=VGS ID=250µA

RDS(ON)

Static Drain-Source On-Resistance

Ω

Forward Transconductance

IS=1A,VGS=0V

VDS=5V, ID=11.5A

VGS=4.5V, ID=11.5A

Diode Forward Voltage

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=11.5A

Reverse Transfer Capacitance

IF=11.5A, dI/dt=500A/µs

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial TJ =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. The maximum current rating is limited by package.

H. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev 0 : Sep 2010

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