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AOW14N50 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOW14N50 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 14A RDS(ON) (at VGS=10V) < 0.38 Ω 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature. A W W/ oC °C mJ V/ns °C Maximum Case-to-sink A Maximum Junction-to-Case mJ °C/W °C/W Derate above 25 oC Parameter AOW14N50 AOWF14N50 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 500 ID 5 28 278 11 14* 11* The AOW14N50 & AOWF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted AOW14N50 AOWF14N50 600V@150℃ Drain-Source Voltage V ±30 Gate-Source Voltage TC=100°C A 56 Pulsed Drain Current C Continuous Drain Current TC=25°C 14 Avalanche Current C 540 Single plused avalanche energy G 1080 6 Repetitive avalanche energy C Junction and Storage Temperature Range Maximum Junction-to-Ambient A,D Power Dissipation B PD TC=25°C Thermal Characteristics 300 -55 to 150 2.2 0.22 0.45 -- Units °C/W 65 0.5 65 4.5 G D S Top View TO-262F Bottom View Top View TO-262 Bottom View G D S G D S G D S G D S Rev2: July 2010 www.aosmd.com Page 1 of 6 |
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