STU6N65K3 datasheet(1/16 Pages) STMICROELECTRONICS

Part #	STU6N65K3

Description	N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 16 page

This is information on a product in full production.

November 2012

Doc ID 18424 Rev 2

1/16

16

STF6N65K3, STFI6N65K3, STU6N65K3

N-channel 650 V, 1.1

Ω typ., 5.4 A SuperMESH3™ Power MOSFET

in TO-220FP, I²PAKFP, IPAK

Datasheet — production data

Features

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

■ Zener-protected

Applications

■ Switching applications

Description

These SuperMESH3™ Power MOSFETs are the

result of improvements applied to

STMicroelectronics’ SuperMESH™ technology,

combined with a new optimized vertical structure.

These devices boast an extremely low on-

resistance, superior dynamic performance and

high avalanche capability, rendering them suitable

for the most demanding applications.

Figure 1.

Internal schematic diagram

Order codes VDSS RDS(on) max.

ID

Ptot

STF6N65K3

650 V

< 1.3

Ω

5.4 A

30 W

STFI6N65K3

STU6N65K3

110 W

1

2

3

1

2

3

2

1

TO-220FP

I²PAKFP

IPAK

TAB

D(2,TAB)

G(1)

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STF6N65K3

6N65K3

TO-220FP

Tube

STFI6N65K3

I²PAKFP

STU6N65K3

IPAK

www.st.com

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