STU6N65K3 datasheet(3/16 Pages) STMICROELECTRONICS

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STF6N65K3, STFI6N65K3, STU6N65K3

Electrical ratings

Doc ID 18424 Rev 2

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

I²PAKFP

IPAK

VDS

Drain-source voltage

650

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

5.4 (1)

Limited by package

5.4

Drain current (continuous) at TC = 100 °C

3(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

21.6 (1)

21.6

PTOT

Total dissipation at TC = 25 °C

110

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

5.4

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

100

ESD

Gate-source human body model

(C = 100 pF, R = 1.5 k

Ω)

2.5

dv/dt (3)

ISD ≤ 5.4 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

I²PAKFP

IPAK

Rthj-case Thermal resistance junction-case max

4.17

1.14

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

100

°C/W

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