STU6N65K3 datasheet(5/16 Pages) STMICROELECTRONICS

5 / 16 page

STF6N65K3, STFI6N65K3, STU6N65K3

Electrical characteristics

Doc ID 18424 Rev 2

5/16

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 325 V, ID = 2.7 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

5.4

21.6

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 5.4 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.4 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 22)

285

5100

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.4 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 22)

330

2500

15.5

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)GSO

Gate-source breakdown

voltage

Igs=± 1 mA, ID=0

(open drain)

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