IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA90N15T IXTH90N15T

IXTP90N15T IXTQ90N15T

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

40

69

S

C

iss

4100

pF

C

oss

V

560

pF

C

rss

92

pF

t

d(on)

Resistive Switching Times

24

ns

t

r

V

22

ns

t

d(off)

R

44

ns

t

f

19

ns

Q

g(on)

80

nC

Q

gs

V

20

nC

Q

gd

20

nC

R

thJC

0.33

°C/W

R

thCH

TO-220

0.25

°C/W

TO-3P, TO-263, TO-247

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

90

A

I

SM

Repetitive

300

A

V

SD

I

1.2

V

t

rr

I

110

ns

V

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from data gathered during objective characterizations of preliminary engineering lots; but

also may yet contain some information supplied during a pre-production design evaluation. IXYS

reserves the right to change limits, test conditions, and dimensions without notice.