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IXTP90N15T Datasheet(PDF) 6 Page - IXYS Corporation

Part # IXTP90N15T
Description  Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
PDF  6 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP90N15T Datasheet(HTML) 6 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
IXYS REF: T_90N15T(5G)8-08-07-A
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
13
15
17
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25
27
29
31
20
25
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35
40
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55
60
65
70
75
80
85
90
ID - Amperes
RG = 3.3
Ω
VGS = 10V
VDS = 75V
TJ = 125ºC
TJ = 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
10
20
30
40
50
60
70
80
90
100
2
4
6
8
10
12
14
16
RG - Ohms
23
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25
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30
31
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33
t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 75V
I D = 90A
I D = 45A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
16
17
18
19
20
21
22
23
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
30
35
40
45
50
55
60
65
t f
td(off) - - - -
RG = 3.3
Ω, VGS = 10V
VDS = 75V
I D = 90A
I D = 45A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
16
17
18
19
20
21
22
20
30
40
50
60
70
80
90
ID - Amperes
30
35
40
45
50
55
60
t f
td(off) - - - -
RG = 3.3
Ω, VGS = 10V
VDS = 75V
TJ = 125ºC
TJ = 25ºC
TJ = 25ºC
TJ = 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
12
14
16
18
20
22
24
26
28
30
32
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 3.3
Ω
VGS = 10V
VDS = 75V
I D = 90A
I D = 45A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
RG - Ohms
20
30
40
50
60
70
80
90
100
110
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 75V
I D = 45A, 90A



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