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AMP03GSZ Datasheet(PDF) 3 Page - Analog Devices |
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AMP03GSZ Datasheet(HTML) 3 Page - Analog Devices |
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3 / 8 page ![]() –3– REV. F AMP03 WAFER TEST LIMITS (@ V S = 15 V, TA = 25 C, unless otherwise noted.)* AMP03GBC Parameter Symbol Conditions Limit Unit Offset Voltage VOS VS = ±18 V 0.5 mV max Gain Error No Load, VIN = ±10 V, R S = 0 Ω 0.008 % max Input Voltage Range IVR ±10 V min Common-Mode Rejection CMR VCM = ±10 V 80 dB min Power Supply Rejection Ratio PSRR VS = ±6 V to ±18 V 8 µV/V max Output Swing VO RL = 2 k Ω±12 V max Short-Circuit Current Limit ISC Output Shorted to Ground +45/–15 mA min Supply Current ISY No Load 3.5 mA max *Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Input Voltage 2 . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous Storage Temperature Range P, J Package . . . . . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . 300 °C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150 °C Operating Temperature Range AMP03B . . . . . . . . . . . . . . . . . . . . . . . . . –55 °C to +125°C AMP03F, AMP03G . . . . . . . . . . . . . . . . . . –40 °C to +85°C Package Type JA 3 JC Unit Header (J) 150 18 °C/W 8-Lead PDIP (P) 103 43 °C/W 8-Lead SOIC (S) 155 40 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2For supply voltages less than ±18 V, the absolute maximum input voltage is equal to the supply voltage. 3 θ JA is specified for worst-case mounting conditions, i.e., θ JA is specified for device in socket for header and PDIP packages and for device soldered to printed circuit board for SOIC package. ORDERING GUIDE Temperature Package Package Model 1 Range Description Option 2 AMP03GP –40 °C to +85°C8-Lead PDIP P-8 AMP03BJ –40 °C to +85°CHeader H-08B AMP03FJ –40 °C to +85°CHeader H-08B AMP03BJ/883C –55 °C to +125°CHeader H-08B AMP03GS –40 °C to +85°C8-Lead SOIC S-8 AMP03GS-REEL –40 °C to +85°C8-Lead SOIC S-8 5962-9563901MGA –55 °C to +125°CHeader H-08B AMP03GBC Die NOTES 1Burn-in is available on commercial and industrial temperature range parts in PDIP and header packages. 2Consult factory for /883 data sheet. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AMP03 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. DICE CHARACTERISTICS 1. REFERENCE 2. –IN 3. +IN 4. –VEE 5. SENSE 6. OUTPUT 7. +VCC 8. NC DIE SIZE 0.076 inch 0.076 inch, 5,776 sq. mm (1.93 mm 1.93 mm, 3.73 sq. mm) BURN-IN CIRCUIT AMP03 +18V –18V 25k 25k 25k SLEW RATE TEST CIRCUIT AMP03 +15V –15V 0.1 F 0.1 F VIN = 10V VOUT = 10V WARNING! ESD SENSITIVE DEVICE |
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