LM5071

SNVS409E – NOVEMBER 2005 – REVISED APRIL 2013

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Thermal Protection

Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event the maximum junction

temperature is exceeded. This feature prevents catastrophic failures from accidental device overheating. When

activated, typically at 165 degrees Celsius, the controller is forced into a low power standby state, disabling the

output driver, bias regulator, main interface pass MOSFET, and classification regulator if enabled. After the

initiated.

Thermal shutdown is not enabled during auxiliary power operation as the power MOSFET is not running any

current and should not experience an over-temperature condition. If the drain of the MOSFET exceeds 2.5V with

respect to VEE (internal Power Good de-assertion), PoE UVLO becomes de-asserted (insertion of PoE or other

48V supply), or the auxiliary power is removed, thermal limit will be re-enabled immediately.

LM5071 Application Circuit Diagrams

Figure 16. Single Isolated Output with Diode Rectification and 12V Auxiliary Supply

16

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