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MRF166 MRF166C

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power

Field Effect Transistors

N–Channel Enhancement Mode MOSFETs

Designed primarily for wideband large–signal output and driver from 30 – 500

MHz.

• Low Crss — 4.5 pF @ VDS = 28 V

• MRF166C — Typical Performance at 400 MHz, 28 Vdc

Output Power = 20 W

Gain = 17 dB

Efficiency = 55%

• Optional 4–Lead Flange Package (MRF166)

• Replacement for Industry Standards such as MRF136, DV2820, BLF244,

SD1902, and ST1001

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Gate Voltage

VDSS

65

Vdc

Drain–Gate Voltage

(RGS = 1.0 MΩ)

VDGR

65

Vdc

Gate–Source Voltage

VGS

±40

Adc

Drain Current — Continuous

ID

4.0

Adc

Total Device Dissipation @ TC = 25°C

Derate Above 25

°C

PD

70

0.4

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to 150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.5

°C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF166/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF166

MRF166C

20 W, 500 MHz

MOSFET

BROADBAND

RF POWER FETs

CASE 211–07, STYLE 2

CASE 319–07, STYLE 3

D

G

S

REV 6