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HT66F0174 Datasheet(PDF) 13 Page - Holtek Semiconductor Inc

Part # HT66F0174
Description  Enhanced A/D Flash 8-Bit MCU
PDF  115 Pages
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Manufacturer  HOLTEK [Holtek Semiconductor Inc]
Direct Link  http://www.holtek.com
Logo HOLTEK - Holtek Semiconductor Inc

HT66F0174 Datasheet(HTML) 13 Page - Holtek Semiconductor Inc

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Rev. 1.00
1�
���� 11� �01�
Rev. 1.00
1�
���� 11� �01�
HT66F0172/HT66F0174
Enhanced A/D Flash 8-Bit MCU
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDD
Conditions
IOL
I/O Port Sink C�rrent
�V
VOL=0.1VDD
4
8
—
mA
5V
VOL=0.1VDD
10
�0
—
mA
IOH
I/O Port So�rce C�rrent
�V
VOH=0.9VDD
-�
-4
—
mA
5V
VOH=0.9VDD
-5
-10
—
mA
RPH
P���-high Resistance for I/O
Ports
�V
—
�0
60
100
kΩ
5V
—
10
�0
50
kΩ
A.C. Characteristics
Ta= 25˚C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDD
Conditions
fCPU
Operating C�ock
�.�V~5.5V
—
DC
—
8
MHz
�.7V~5.5V
—
DC
—
1�
MHz
4.5V~5.5V
—
DC
—
�0
MHz
fSYS
S�stem C�ock (HXT)
�.�V~5.5V
—
0.4
—
8
MHz
�.7V~5.5V
—
0.4
—
1�
MHz
4.5V~5.5V
—
0.4
—
�0
MHz
fHIRC
S�stem C�ock (HIRC)
�V/5V
Ta = �5°C
-�%
8
�%
MHz
�V/5V
Ta = 0°C ~ 70°C
-5%
8
5%
MHz
�.�V~5.5V Ta = 0°C ~ 70°C
-7%
8
7%
MHz
�.�V~5.5V Ta = -40°C ~ 85°C
-10%
8
10%
MHz
fLIRC
S�stem C�ock (LIRC)
5V
Ta = �5°C
-10%
��
+10%
kHz
�.�V~5.5V Ta = -40°C ~ 85°C
-�0%
��
+60%
kHz
tTIMER
TCKn Inp�t P��se Width
—
—
0.�
—
—
μs
tINT
Interr�pt P��se Width
—
—
10
—
—
μs
tEERD
EEPROM Read Time
—
—
—
�
4
tSYS
tEEWR
EEPROM Write Time
—
—
—
�
4
ms
tSST
S�stem Start-�p Timer Period
(Power On Reset)
—
—
—
1�8
—
tSYS
S�stem Start-�p Timer Period
(Wake-�p from HALT�
fSYS off at HALT State)
—
fSYS=HIRC
—
16
—
S�stem Start-�p Timer Period
(Wake-�p from HALT�
fSYS off at HALT State)
—
fSYS=LIRC
—
�
—
S�stem Start-�p Timer Period
(Wake-�p from HALT�
fSYS on at HALT State)
—
—
—
�
—
tRSTD
S�stem Reset De�a� Time
(Power On Reset� LVR Reset�
LVR S/W Reset (LVRC)�
WDT S/W Reset (WDTC))
—
—
�5
50
100
ms
S�stem Reset De�a� Time
(WDT Norma� Reset)
—
—
8.�
16.7
��.�
ms
Note:1.tSYS=1/fSYS
2.TomaintaintheaccuracyoftheinternalHIRCoscillatorfrequency,a0.1μFdecouplingcapacitorshould
beconnectedbetweenVDDandVSSandlocatedasclosetothedeviceaspossible.



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