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IXRH40N120 Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXRH40N120
Description  IGBT with Reverse Blocking capability
PDF  5 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXRH40N120 Datasheet(HTML) 2 Page - IXYS Corporation

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© 2005 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
IXRH 40N120
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Component
Symbol
Conditions
Maximum Ratings
T
VJ
-55...+150
°C
T
stg
-55...+125
°C
M
d
mounting torque
0.8 - 1.2
Nm
F
C
mounting force with clip
20...120
N
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
thCH
with heatsink compound
0.25
K/W
Weight
6g
IGBT
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
typ.
External diode DSEP30-12 - diagram see Fig. 17
t
d(on)
31
ns
t
r
54
ns
t
d(off)
184
ns
t
f
24
ns
E
on
3.0
mJ
E
off
0.7
mJ
Internal diode - diagram see Fig. 18
t
d(on)
29.5
ns
t
r
47
ns
t
d(off)
183
ns
t
f
46
ns
E
on
19.2
mJ
E
off
1.0
mJ
E
rec int
7mJ
I
RM
I
F = 35 A; diC/dt = -50 A/µs; TVJ = 125°C
28.5
A
t
rr
V
CE = -600 V; VGE = 15 V
2.1
µs
R
thJC
0.42 K/W
Inductive load, T
VJ = 125°C
V
CE = 600 V; IC = 35 A
V
GE = ±15 V; RG = 15 Ω
Inductive load, T
VJ = 125°C
V
CE = 600 V; IC = 35 A
V
GE = ±15 V; RG = 15 Ω



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