4 - 5

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IXYS reserves the right to change limits, test conditions and dimensions.

IXRH 40N120

E

on

t

d(on)

t

r

E

off

t

d(off)

t

f

R

G

Ω

R

G

Ω

E

on

mJ

E

off

t

ns

t

0

20406080

100

0

1

2

3

4

0

200

400

600

800

0

204060

80

100

0

2

4

6

8

10

12

14

0

20

40

60

80

100

120

140

0

204060

80

0

1

2

3

0

300

600

900

E

on

t

d(on)

t

r

E

off

t

d(off)

t

f

R

G

R

G

E

on

mJ

E

off

t

ns

t

V

V

I

C

= 35 A

T

J

= 125°C

0

20406080

100

0

5

10

15

20

25

30

0

25

50

75

100

125

150

0

204060

80

0

10

20

30

40

50

0

30

60

90

120

150

E

on

t

d(on)

t

r

I

C

A

E

on

E

recint

t

ns

V

V

R

G

= 15

Ω

T

J

= 125°C

E

rec int

0

204060

80

100

0

2

4

6

0

80

160

240

E

off

t

d(off)

t

f

I

C

A

E

off

t

ns

mJ

V

V

R

G

= 15

Ω

T

J

= 125°C

ns

mJ

V

V

I

C

= 35 A

T

J

= 125°C

E

recint

V

V

I

C

= 35 A

T

J

= 125°C

ns

mJ

V

V

I

C

= 35 A

T

J

= 125°C

mJ

Ω

Ω

Fig. 7 Typ. turn on energy and switching times

vs. gate resistor, inductive switching

with ext. free wheeling diode (Fig. 17)

Fig. 8 Typ. turn off energy and switching times

vs. gate resistor, inductive switching

with ext. free wheeling diode (Fig. 17)

Fig. 9 Typ. turn on energy and switching times

vs. collector current, inductive switching

with internal diode (Fig. 18)

Fig. 10 Typ. turn off energy and switching times

vs. collector current, inductive switching

with internal diode (Fig. 18)

Fig. 11 Typ. turn on energy and switching times

vs. gate resistor, inductive switching

with internal diode (Fig. 18)

Fig. 12 Typ. turn off energy and switching times

vs. gate resistor, inductive switching

with internal diode (Fig. 18)