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STN3N40K3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STN3N40K3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() April 2011 Doc ID 17697 Rev 2 1/13 13 STN3N40K3 N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3™ Power MOSFET Features ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse rcovery characteristics ■ Zener-protected Application ■ Switching applications Description The device is made using the SuperMESH3TM Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH3TM technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID PW STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W SOT-223 1 2 2 3 D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STN3N40K3 3N40K3 SOT-223 Tape and reel www.st.com |
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