STN3N40K3 datasheet(3/13 Pages) STMICROELECTRONICS

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STN3N40K3

Electrical ratings

Doc ID 17697 Rev 2

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

400

VGS

Gate-source voltage

± 30

Drain current continuous TC = 25 °C

1.8 (1)

Drain current limited by maximum temperature allowed.

Drain current continuous TC = 100 °C

1 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current pulsed

7.2

IAR

(3)

Pulse width limited by TJmax.

Avalanche current, repetetive or not repetetive

0.6

EAS

(4)

Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

Single pulse avalanche energy

PTOT

Total dissipation at TC = 25 °C

3.3

dv/dt (5)

Isd

≤1.8 A, di/dt ≤400 A/µs, VDD ≤80% V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Vesd-(g-s) G-S ESD (HBM C 0 100 pF; R = 1.5 kΩ)

1000

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max.

37.88

°C/W

Rthj-a

Thermal resistance junction-amb max.

°C/W

Maximum lead temperature for soldering

purpose

260

°C

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