PNP BDT82 – BDT84 – BDT86 – BDT88

09/11/2012

COMSET SEMICONDUCTORS

1 | 4

 

SILICON POWER TRANSISTORS

The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base transistors in a TO-220 plastic

envelope.

They are intended for use in audio output stages and general amplifier and switching

appications.

NPN complements are BDT81 – BDT83 – BDT85 – BDT87.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

-IB = 0

BDT82

-60

V

BDT84

-80

BDT86

-100

BDT88

-120

Collector-Base Voltage

-IE = 0

BDT82

-60

V

BDT84

-80

BDT86

-100

BDT88

-120

Emitter-Base Voltage

-IC = 0

-7

V

Collector Current

-15

A

Collector Peak Current

-20

A

Base Current

-4

A

Pt

Total Power Dissipation

@ TC = 25°

125

W

Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to Ambient

70

K/W

Thermal Resistance, Junction to Mounting Base

1

K/W