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BDT82 Datasheet(PDF) 3 Page - Comset Semiconductor |
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BDT82 Datasheet(HTML) 3 Page - Comset Semiconductor |
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3 / 4 page ![]() PNP BDT82 – BDT84 – BDT86 – BDT88 09/11/2012 COMSET SEMICONDUCTORS 3 | 4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s)Sec Min Typ Max Unit IS/B Second breakdown collector current VCE= -50 V, tP = 100 ms -2.5 - - A fT Transition frequency VCE= -10 V, IC= -0.5 A, f=1 MHz - 20 - MHz ton Turn-on time IC= -7 A IB1 = -IB2 = -0.7 A - - 1 µs Toff Turn-off time - - 2 (*) Pulse Duration = 300 µs, δ <= 2% |
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