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BDT82 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BDT82 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 4 page  PNP BDT82 – BDT84 – BDT86 – BDT88 09/11/2012 COMSET SEMICONDUCTORS 2 | 4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICB0 Collector Cutoff Current IE=0A, VCB = -60 V BDT82 - - -0.2 mA IE=0A, VCB = -80 V BDT84 IE=0A, VCB = -100 V BDT86 IE=0A, VCB = -120 V BDT88 ICES Collector Cutoff Current VBE=0, VCE = -60V BDT82 - - -1 mA VBE=0, VCE = -80V BDT84 BDT86 VBE=0, VCE = -100V VBE=0, VCE = -120V BDT88 IEBO Emitter Cutoff Current VEB= -7 V IC=0 BDT82 - - -0.1 mA BDT84 BDT86 BDT88 hFE DC Current Gain (*) IC= -50mA VCE= -10V BDT82 40 - - - BDT84 BDT86 BDT88 IC= -5A VCE= -4V BDT82 40 - - BDT84 BDT86 BDT88 VCE(SAT) Collector-Emitter Saturation Voltage (*) IC= -5A IB= -0.5A BDT82 - - -1 V BDT84 BDT86 BDT88 IC= -5A IB= -0.5A BDT82 - - -1.6 BDT84 BDT86 BDT88 VBE Base-Emitter Voltage (*) IC= -7A IB= -0.7A BDT82 - - -1.5 V BDT84 BDT86 BDT88 |
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