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STW70N10F4 Datasheet(PDF) 3 Page - STMicroelectronics |
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STW70N10F4 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 18 page ![]() STB/D/P/W70N10F4 Electrical ratings Doc ID 15207 Rev 3 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220, TO-247, D²PAK DPAK VDS Drain-source voltage (VGS = 0) 100 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 65 60 A ID Drain current (continuous) at TC = 100 °C 46 43 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 260 240 A PTOT Total dissipation at TC = 25 °C 150 125 W Derating factor 1 0.83 W/°C EAS (2) 2. Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V Single pulse avalanche energy 120 mJ Tstg Storage temperature – 55 to 175 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit TO-220, TO-247, D²PAK DPAK Rthj-case Thermal resistance junction-case max 1 1.2 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 50 (1) 1. When mounted on FR-4 board of 1 inch², 2 oz Cu °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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