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STW70N10F4 Datasheet(PDF) 5 Page - STMicroelectronics |
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STW70N10F4 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 18 page ![]() STB/D/P/W70N10F4 Electrical characteristics Doc ID 15207 Rev 3 5/18 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current - 60 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 240 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 60 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60 A, VDD = 25 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 17) - 80 280 6.7 ns nC A |
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