STW70N10F4 datasheet(4/18 Pages) STMICROELECTRONICS

4 / 18 page

Electrical characteristics

STB/D/P/W70N10F4

4/18

Doc ID 15207 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

100

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = max rating

µA

VDS = max rating,TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 30 A

0.015

0.0195

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

5800

Coss

Output capacitance

300

Crss

Reverse transfer

capacitance

190

Total gate charge

VDD = 80 V, ID = 65 A,

VGS = 10 V

(see Figure 16)

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 50 V, ID = 30 A

RG =4.7 Ω VGS = 10 V

(see Figure 15)

td(off)

Turn-off-delay time

Fall time

VDD = 50 V, ID = 30 A,

RG =4.7 Ω, VGS = 10 V

(see Figure 15)

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