2SC5008 datasheet(3/12 Pages) RENESAS

3 / 12 page

1993

DATA SHEET

DESCRIPTION

The 2SC5008 is an NPN epitaxial silicon transistor designed for use

in low noise and small signal amplifiers from VHF band to L band. Low

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface, process (NEST2 process) which is an NEC

proprietary fabrication technique.

FEATURES

•

Low Voltage Use.

•

High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

•

Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

•

Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

•

High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

•

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC5008

50 pcs./Unit

2SC5008-T1

3 kpcs./Reel

* Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

1.5

Collector Current

Total Power Dissipation

125 mW

Junction Temperature

150

˚ C

Storage Temperature

Tstg

–65 to + 150

˚ C

SILICON TRANSISTOR

Document No. P10387EJ2V0DS00 (2nd edition)

(Previous No. TD-2433)

Date Published July 1995 P

Printed in Japan

2SC5008

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

1.6 ± 0.1

0.8 ± 0.1

PACKAGE DIMENSIONS

in millimeters

1. Emitter

2. Base

3. Collector

2SC5008 Datasheet(PDF) 3 Page - Renesas Technology Corp

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