MTP2N60E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (positive)

V(BR)DSS

600

—

—

480

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 480 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

0.25

1.0

mA

Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0 Vdc)

IGSSF

—

—

100

nAdc

Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0 Vdc)

IGSSR

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (negative)

µ

VGS(th)

2.0

—

3.1

8.5

4.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)

RDS(on)

—

3.3

3.8

Ohm

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125°C)

VDS(on)

—

—

—

—

8.2

8.4

Vdc

Forward Transconductance (VDS ≥ 50 Vdc, ID = 1.0 Adc)

g

FS

1.0

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

435

—

pF

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Crss

—

56

—

Output Capacitance

f = 1.0 MHz)

Coss

—

9.2

—

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(VDD = 300 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc, Rg = 18 Ω)

td(on)

—

12

—

ns

Rise Time

(VDD = 300 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc, Rg = 18 Ω)

tr

—

21

—

Turn–Off Delay Time

(VDD = 300 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc, Rg = 18 Ω)

td(off)

—

30

—

Fall Time

tf

—

24

—

Gate Charge

(VDS = 400 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

QT

—

13

22

nC

(VDS = 400 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q1

—

2.0

(VDS = 400 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q2

—

6.0

—

Q3

—

5.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

1.0

1.6

Vdc

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)

—

0.9

—

Reverse Recovery Time

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

340

—

ns

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

″

(Measured from the drain 0.25

″ from package to center of die)

Ld

—

—

3.5

4.5

—

—

nH

Internal Source Inductance

(Measured from the source pin 0.25

″ from package to source bond pad.)

Ls

—

7.5

—

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.

(2) Switching characteristics are independent of operating junction temperature.