MTP2N60E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

TJ = 25°C

VGS = 10 V

15 V

2.9

4.1

3.5

VGS = 0 V

0

200

400

1

100

100

300

600

500

TJ = 125°C

1000

3.9

4.3

4.5

3.7

3.3

3.1

10

0.5

1.5

3.5

2.5

1

2

4

3

100

°C

4

3

2

1

0

0

4

8

12

16

20

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

VGS = 10 V

7 V

6 V

5.5 V

5 V

TJ = 25°C

8

6

4

2

0

0

2

4

6

8

10

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

VDS ≥ 10 V

–55

°C

TJ = 100°C

25

°C

12

8

4

0

0

1.5

3

4.5

6

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

TJ = 25°C

100

°C

–55

°C

2.7

2.5

0

TJ, JUNCTION TEMPERATURE (°C)

VGS = 10 V

ID = 1 A

– 50

0

50

100

150

125

– 25

25

75

2.5

2

1.5

1

0.5

0