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AM28F010 Datasheet(PDF) 26 Page - Advanced Micro Devices

Part # AM28F010
Description  1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
PDF  35 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM28F010 Datasheet(HTML) 26 Page - Advanced Micro Devices

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26
Am28F010
SWITCHING TEST WAVEFORMS
SWITCHING CHARACTERISTICS over operating range unless otherwise specified
AC Characteristics—Read Only Operation
Notes:
1. Guaranteed by design; not tested.
2. Not 100% tested.
Parameter
Symbols
Am28F010 Speed Options
JEDEC
Standard Parameter Description
-70
-90
-120
-150
-200
Unit
tAVAV
tRC
Read Cycle Time (Note 2)
Min
70
90
120
150
200
ns
tELQV
tCE
Chip Enable AccessTime
Max
70
90
120
150
200
ns
tAVQV
tACC
Address Access Time
Max
70
90
120
150
200
ns
tGLQV
tOE
Output Enable Access Time
Max
3535505555
ns
tELQX
tLZ
Chip Enable to Output in Low Z (Note 2)
Min
00000
ns
tEHQZ
tDF
Chip Disable to Output in High Z (Note 1)
Max
20
20
30
35
35
ns
tGLQX
tOLZ
Output Enable to Output in Low Z (Note 2)
Min
00000
ns
tGHQZ
tDF
Output Disable to Output in High Z (Note 2)
Max
20
20
30
35
35
ns
tAXQX
tOH
Output Hold from first of Address, CE#, or
OE# Change (Note 2)
Min
00000
ns
tWHGL
Write Recovery Time before Read
Min
66666
µs
tVCS
VCC Setup Time to Valid Read (Note 2)
Min
50
50
50
50
50
µs
11559H-15
3 V
0 V
Input
Output
1.5 V
1.5 V
Test Points
AC Testing for -70 devices: Inputs are driven at 3.0 V for a
logic “1” and 0 V for a logic “0”. Input pulse rise and fall times
are
≤10 ns.
2.4 V
0.45 V
Input
Output
Test Points
2.0 V
2.0 V
0.8 V
0.8 V
AC Testing (all speed options except -70): Inputs are driven at
2.4 V for a logic “1” and 0.45 V for a logic “0”. Input pulse rise
and fall times are
≤10 ns.



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