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28F256 Datasheet(PDF) 29 Page - Advanced Micro Devices |
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28F256 Datasheet(HTML) 29 Page - Advanced Micro Devices |
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29 / 35 page ![]() Am28F256A 29 AC CHARACTERISTICS—WRITE/ERASE/PROGRAM OPERATIONS Alternate CE# Controlled Writes Notes: 1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC Characteristics for Read Only operations. 2. Embedded program operation of 14 µs consists of 10 µs program pulse and 4 µs write recovery before read. This is the minimum time for one pass through the programming algorithm. 3. Embedded erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a typical time for one embedded erase operation. 4. Not 100% tested. Parameter Symbols Parameter Description Am28F256A Speed Options Unit JEDEC Standard -70 -90 -120 -150 -200 tAVAV tWC Write Cycle Time (Note 4) Min 70 90 120 150 200 ns tAVEL tAS Address Setup Time Min 0 0 0 0 0 ns tELAX tAH Address Hold Time Min 45 45 50 60 75 ns tDVEH tDS Data Setup Time Min 45 45 50 50 50 ns tEHDX tg Data Hold Time Min 10 10 10 10 10 ns tOEH Output Enable Hold Time for Embedded Algorithm only Min 10 101010 10 ns tGHEL Read Recovery Time Before Write Min 0 0 0 0 0 µs tWLEL tWS WE # Setup Time by CE# Min 0 0 000 ns tEHWK tWH WE # Hold Time Min 0 0 0 0 0 ns tELEH tCP Write Pulse Width Min 65 65 70 80 80 ns tEHEL tCPH Write Pulse Width HIGH Min 20 20 20 20 20 ns tEHEH3 Embedded Programming Operation (Note 2) Min 14 141414 14 µs tEHEH4 Embedded Erase Operation (Note 3) Typ 5 5 5 5 5 sec tVPEL VPP Setup Time to Chip Enable LOW (Note 4) Min 100 100 100 100 100 ns tVCS VCC Setup Time to Chip Enable LOW (Note 4) Min 50 505050 50 µs tVPPR VPP Rise Time 90% VPPH (Note 4) Min 500 500 500 500 500 ns tVPPF VPP Fall Time 90% VPPL (Note 4) Min 500 500 500 500 500 ns tLKO VCC < VLKO to Reset (Note 4) Min 100 100 100 100 100 ns |
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