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ESDAXLC6-1MY2 Datasheet(PDF) 3 Page - STMicroelectronics |
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ESDAXLC6-1MY2 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() ESDAXLC6-1MY2 Characteristics Doc ID 16923 Rev 2 3/11 Figure 3. Junction capacitance versus reverse voltage applied (typical values) Figure 4. Junction capacitance versus frequency (Vr = 0 V, typical values) 100 150 200 250 300 350 400 450 500 012 345 Capacitance (fF) Voltage (V) F = 200 MHz Vosc = 30 mV C (fF) 100 150 200 250 300 350 400 450 500 1 10 100 1000 10000 Frequency (MHz) V= 0 V V= 30 mV r osc Figure 5. S21 (dB) attenuation Figure 6. Relative variation of leakage current versus junction temperature (typical values) 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G 10.0G 14.00 12.00 -10.00 -8.00 -6.00 - - - - - - -4.00 - 2.00 0.00 S21 (dB) f (Hz) 1 10 100 1000 10000 25 50 75 100 125 I [T ]/I [T = 25 °C] Rj R j T (°C) j V= 3 V T = 25 °C R jinitial Figure 7. ESD response to IEC 61000-4-2 (+ 8 kV contact discharge) Figure 8. ESD response to IEC 61000-4-2 (-8 kV contact discharge) 20 V/div 20 ns/div C2 20 V/div 20 ns/div C2 |
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