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LF355 Datasheet(PDF) 19 Page - Texas Instruments |
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LF355 Datasheet(HTML) 19 Page - Texas Instruments |
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19 / 32 page  LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0C – MAY 2000 – REVISED MARCH 2013 R1, R4 matched. Linearity 0.1% over 2 decades. Figure 49. Decades VCO Figure 50. Isolating Large Capacitive Loads • Overshoot 6% • ts 10μs • When driving large CL, the VOUT slew rate determined by CL and IOUT(MAX): Figure 51. Low Drift Peak Detector • By adding D1 and Rf, VD1=0 during hold mode. Leakage of D2 provided by feedback path through Rf. • Leakage of circuit is essentially Ib (LF155, LF156) plus capacitor leakage of Cp. • Diode D3 clamps VOUT (A1) to VIN−VD3 to improve speed and to limit reverse bias of D2. • Maximum input frequency should be << ½ πRfCD2 where CD2 is the shunt capacitance of D2. Copyright © 2000–2013, Texas Instruments Incorporated Submit Documentation Feedback 19 Product Folder Links: LF155 LF156 LF355 LF356 LF357 |
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