LM56

SNIS120G – APRIL 2000 – REVISED FEBRUARY 2013

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Simplified Block Diagram and Connection Diagram

Block Diagram

Typical Application

where:

(R1 + R2 + R3) = 27 k

Ω and

R3 = 27 k

Ω − R1 − R2

Figure 1. Microprocessor Thermal Management

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

2

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