IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGF25N250

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

16

26

S

I

C(ON)

V

240

A

C

ies

2970

pF

C

oes

V

98

pF

C

res

36

pF

Q

g

75

nC

Q

ge

I

15

nC

Q

gc

30

nC

t

d(on)

68

ns

t

r

233

ns

t

d(off)

209

ns

t

f

200

ns

R

thJC

1.10 °C/W

R

thCS

0.15

°C/W

R

thJA

30

°C/W

Resistive Switching Times

I

V

2. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537