SPGP0280A datasheet(5/8 Pages) SEMIHOW

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Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

036

DS = 400V

DS = 160V

DS = 640V

* Note : I

D = 2.0A

G, Total Gate Charge [nC]

-1

300

600

900

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

012

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

Typical Characteristics ( SenseFET Part )

2468

0.1

-25

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

150

0.4

0.6

0.8

1.0

0.1

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

150

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

Bottom : 5.0 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

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