DS1225 datasheet(6/8 Pages) DALLAS

6 / 8 page

DS1225Y

021998 6/8

POWER–DOWN/POWER–UP CONDITION

3.2V

DATA RETENTION TIME

VCC

tPD

tREC

tDR

LEAKAGE CURRENT

IL SUPPLIED FROM

LITHIUM CELL

VTP

SEE NOTE 11

POWER–DOWN/POWER–UP TIMING

PARAMETER

SYM

MIN

MAX

UNITS

NOTES

CE at VIH before Power–Down

tPD

µs

VCC Slew from VTP to 0V

100

µs

VCC Slew from 0V to VTP

µs

CE at VIH after Power–Up

tREC

(tA = 25°C)

PARAMETER

SYM

MIN

MAX

UNITS

NOTES

Expected Data Retention Time

tDR

years

WARNING:

Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode.

NOTES:

1. WE is high for a read cycle.

2. OE = VIH or VIL. If OE = VIH during a write cycle, the output buffers remain in a high impedance state.

3. tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE or WE going low to the

earlier of CE or WE going high.

4. tDS is measured from the earlier of CE or WE going high.

5. These parameters are sampled with a 5 pF load and are not 100% tested.

6. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the output

buffers remain in a high impedance state during this period.

7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain

in a high impedance state during this period.

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