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18B20 Datasheet(PDF) 24 Page - Dallas Semiconductor |
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18B20 Datasheet(HTML) 24 Page - Dallas Semiconductor |
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24 / 27 page ![]() DS18B20 24 of 27 ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground -0.5V to +6.0V Operating Temperature -55 °C to +125°C Storage Temperature -55 °C to +125°C Soldering Temperature See J-STD-020A specification * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES Supply Voltage VDD Local Power 3.0 5.5 V 1 Data Pin DQ -0.3 +5.5 V 1 Logic 1 VIH 2.2 VCC+ 0.3 V 1,2 Logic 0 VIL -0.3 +0.8 V 1,3,7 DC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; VDD=3.0V to 5.5V) PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES Thermometer Error tERR -10°C to +85°C ±½ °C -55°C to +125°C ±2 Input Logic High VIH Local Power Parasite Power 2.2 3.0 5.5 V V 1,2 1,2 Input Logic Low VIL -0.3 +0.8 V 1,3,7 Sink Current IL VI/O=0.4V -4.0 mA 1 Standby Current IDDS 750 1000 nA 6,8 Active Current IDD 1 1.5 mA 4 DQ-Input Load Current IDQ 5µA 5 AC ELECTRICAL CHARACTERISTICS: NV MEMORY (-55°C to +125°C; VDD=3.0V to 5.5V) PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES NV Write Cycle Time twr 210 ms EEPROM Writes NEEWR -55°C to +55°C 50k writes EEPROM Data Retention tEEDR -55°C to +55°C 10 years |
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