18B20 datasheet(25/27 Pages) DALLAS

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DS18B20

25 of 27

AC ELECTRICAL CHARACTERISTICS:

(-55°C to +125°C; VDD=3.0V to 5.5V)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNITS

NOTES

Temperature

Conversion

tCONV

9 bit

93.75

Time

10 bit

187.5

11 bit

375

12 bit

750

Time Slot

tSLOT

120

µs

Recovery Time

tREC

1µs

Write 0 Low Time

rLOW0

120

µs

Write 1 Low Time

tLOW1

115

µs

Read Data Valid

tRDV

µs

Reset Time High

tRSTH

480

µs

Reset Time Low

tRSTL

480

µs

Presence Detect High

tPDHIGH

µs

Presence Detect Low

tPDLOW

240

µs

Capacitance

CIN/OUT

NOTES:

1. All voltages are referenced to ground.

2. Logic one voltages are specified at a source current of 1 mA.

3. Logic zero voltages are specified at a sink current of 4 mA.

4. Active current refers to either temperature conversion or writing to the E

2 memory. Writing to E2

memory consumes approximately 200

µA for up to 10 ms.

5. Input load is to ground.

6. Standby current specified up to 70

°C. Standby current typically is 3 µA at 125°C.

7. To always guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have

to be reduced to as much as 0.5V.

8. To minimize IDDS, DQ should be: GND

≤ DQ ≤ GND +0.3V or V

DD – 0.3V

≤ DQ ≤ V

DD.

9. Under parasite power, the max tRSTL before a power on reset occurs is 960

µS.

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