BSS138 datasheet(1/5 Pages) DIODES

Part #	BSS138

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 5 page

DS30144 Rev. 6 - 2

1 of 5

BSS138

www.diodes.com

BSS138

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

·

Low On-Resistance

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

Maximum Ratings

@ TA = 25

°C unless otherwise specified

Characteristic

Symbol

BSS138

Units

Drain-Source Voltage

VDSS

50

V

Drain-Gate Voltage RGS

£ 20KW

VDGR

50

V

Gate-Source Voltage

Continuous

VGSS

±20

V

Drain Current

Continuous

ID

200

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

417

°C/W

Operating and Storage Temperature Range

Tj,TSTG

-55 to +150

°C

·

Case: SOT-23, Molded Plastic

·

Case Material - UL Flammability Classification

Rating 94V-0

·

Moisture sensitivity: Level 1 per J-STD-020A

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking (See Page 2): K38

·

Ordering & Date Code Information: See Page 2

·

Weight: 0.008 grams (approx.)

Mechanical Data

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

D

G

S

Electrical Characteristics

@ TA = 25

°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Drain-Source Breakdown Voltage

BVDSS

50

75

¾

V

VGS = 0V, ID = 250

mA

Zero Gate Voltage Drain Current

IDSS

¾¾

0.5

µA

VDS = 50V, VGS = 0V

Gate-Body Leakage

IGSS

¾¾

±100

nA

VGS =

±20V, VDS = 0V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(th)

0.5

1.2

1.5

V

VDS =VGS, ID =-250

mA

Static Drain-Source On-Resistance

RDS (ON)

¾

1.4

3.5

W

VGS = 10V, ID = 0.22A

Forward Transconductance

gFS

100

¾¾

mS

VDS =25V, ID = 0.2A, f = 1.0KHz

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

¾¾

50

pF

VDS = 10V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

¾¾

25

pF

Reverse Transfer Capacitance

Crss

¾¾

8.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

¾¾

20

ns

VDD = 30V, ID = 0.2A,

RGEN = 50

W

Turn-Off Delay Time

tD(OFF)

¾¾

20

ns

Notes:

1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to miminize self-heating effect.

Source

Gate

Drain

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

a

0

°

8

°

All Dimensions in mm

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