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GP1601FSS18 Datasheet(PDF) 5 Page - Dynex Semiconductor

Part # GP1601FSS18
Description  Single Switch Low VCE(SAT) IGBT Module
PDF  9 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP1601FSS18 Datasheet(HTML) 5 Page - Dynex Semiconductor

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GP1601FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical turn-on energy vs collector current
Fig. 6 Typical turn-off energy vs collector current
0
400
800
1200
2400
2800
3200
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 25˚C
2000
1600
0
400
800
1200
2400
2800
3200
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 125˚C
2000
1600
01600
200
400
Collector current, IC - (A)
0
200
1200
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 2.2Ω
EOFF
EON
EREC
400
600
800
1000
600
800
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1200
1400
0
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1800
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1400
01
2
3
4
5
6
7
8
9
10
Gate resistance, RG - (Ohms)
EON
EOFF
EREC
Tcase = 125˚C
VGE = ±15V
VCE = 900V
IT = 1600A



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