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GP201MHS18 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # GP201MHS18
Description  Low VCE(SAT) Half Bridge IGBT Module
PDF  10 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP201MHS18 Datasheet(HTML) 4 Page - Dynex Semiconductor

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GP201MHS18
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
650
350
180
600
120
100
80
Typ.
500
250
90
450
90
70
50
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 900V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I
F = 200A, VR = 50% VCES,
dI
F/dt = 2500A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
T
case = 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
800
450
200
700
130
150
110
Typ.
600
350
130
540
100
120
80
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 900V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I
F = 200A, VR = 50% VCES,
dI
F/dt = 2000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr



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